| PART |
Description |
Maker |
| QEC121 QEC122 |
AIGAAS INFRARED EMITTING DIODE
|
QT Optoelectronics
|
| SHF-0198 |
DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET
|
STANFORD[Stanford Microdevices]
|
| ML6XX15 ML60115R |
From old datasheet system
AIGaAs LASER DIODES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MCT5200 MCT5201 |
HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS
|
QT[QT Optoelectronics]
|
| QAL-785-04-F-18-3 QAL-785-04-F-18 QAL-785-04-F-18- |
AIGaAs Laser Diode AIGaAs激光二极管
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MA4AGSW4 |
From old datasheet system
AIGAAS SP4T PIN DIODE SWITCH
|
MACOM[Tyco Electronics]
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| ML6101A ML6411A |
(ML6101A - ML6701A) AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
Mitsubishi Electric
|
| MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| EPA120A |
High Efficiency Heterojunction Power FET
|
Excelics Semiconductor, Inc.
|
| EPA018B-70 |
High Efficiency Heterojunction Power FET
|
Excelics Semiconductor, Inc.
|
